MTB17A03V8
Overview
The MTB17A03V8 consists of two N-channel enhancement-mode MOSFETs in a DFN3×3 package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
- Single Drive Requirement
- Low On-resistance
- Fast Switching Characteristic
- Dynamic dv/dt rating
- Repetitive Avalanche Rated
- Pb-free lead plating and halogen-free package Equivalent Circuit
