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Cystech Electonics

MTB17A03V8 Datasheet Preview

MTB17A03V8 Datasheet

Dual N-Channel Logic Level Enhancement Mode MOSFET

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CYStech Electronics Corp.
Spec. No. : C396V8
Issued Date : 2013.08.09
Revised Date : 2013.08.14
Page No. : 1/9
Dual N-Channel Logic Level Enhancement Mode MOSFET
MTB17A03V8 BVDSS
ID
RDSON(TYP)
VGS=10V, ID=6A
VGS=4.5V, ID=4A
30V
7A
16mΩ
25mΩ
Description
The MTB17A03V8 consists of two N-channel enhancement-mode MOSFETs in a DFN3×3 package,
providing the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost effectiveness.
Features
Single Drive Requirement
Low On-resistance
Fast Switching Characteristic
Dynamic dv/dt rating
Repetitive Avalanche Rated
Pb-free lead plating and halogen-free package
Equivalent Circuit
MTB17A03V8
Outline
DFN3×3
GGate DDrain SSource
Pin 1
Ordering Information
Device
MTB17A03V8-T1-G
Package
DFN3×3
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
MTB17A03V8
CYStek Product Specification




Cystech Electonics

MTB17A03V8 Datasheet Preview

MTB17A03V8 Datasheet

Dual N-Channel Logic Level Enhancement Mode MOSFET

No Preview Available !

CYStech Electronics Corp.
The following characteristics apply to each MOSFET.
Absolute Maximum Ratings (Ta=25°C, unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=10V, TA=25°C
Continuous Drain Current @ VGS=10V, TA=70°C
Pulsed Drain Current
Total Power Dissipation
Single device operation
Single device value at dual operation
Symbol
VDS
VGS
ID
IDM
PD
Operating Junction and Storage Temperature Range
Tj, Tstg
Spec. No. : C396V8
Issued Date : 2013.08.09
Revised Date : 2013.08.14
Page No. : 2/9
Limits
30
±20
7
5.6
30 *1
1.5 *2
1.24 *2
-55~+150
Unit
V
A
W
°C
Thermal Data
Parameter
Symbol Value Unit
Max. Thermal Resistance, Junction-to-ambient, single device operation
Max. Thermal Resistance, Junction-to-ambient, single device value at dual operation
Rth,j-a
84 *2
101 *2
°C/W
Note : 1. Pulse width limited by maximum junction temperature.
2. Surface mounted on a 1 in² pad of 2oz copper, t5s. In practice Rth,j-a will be determined by customer’s PCB characteristics.
216°C/W when mounted on a minimum pad of 2 oz. copper.
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
RDS(ON) *1
30
1
-
-
-
-
-
-
--
1.7 2.5
V
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
8.5 -
S VDS =5V, ID=6A
-
±100
nA VGS=±20V
-
-
1
25
μA
VDS =24V, VGS =0
VDS =24V, VGS =0, Tj=125°C
16
25
25
35
mΩ
VGS =10V, ID=6A
VGS =4.5V, ID=4A
Dynamic
Ciss
Coss
Crss
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr *1, 2
td(OFF) *1, 2
tf *1, 2
-
-
-
-
-
-
-
-
-
-
715 -
76 -
66 -
12 -
2.4 -
3.3 -
7.5 -
12 -
21 -
7-
pF VDS=15V, VGS=0V, f=1MHz
nC VDS=15V, VGS=10V, ID=7A
ns VDS=15V, ID=1A, VGS=10V, RGS=6Ω
MTB17A03V8
CYStek Product Specification


Part Number MTB17A03V8
Description Dual N-Channel Logic Level Enhancement Mode MOSFET
Maker Cystech Electonics
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