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Cystech Electonics

MTE015N10QH8 Datasheet Preview

MTE015N10QH8 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C168H8
Issued Date : 2016.06.02
Revised Date :
Page No. : 1/10
N-Channel Enhancement Mode Power MOSFET
MTE015N10QH8 BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDSON(typ)@VGS=10V, ID=20A
100 V
39 A
8.8A
12.6 mΩ
Features
Single Drive Requirement
Low On-resistance
Fast Switching Characteristic
Pb-free lead plating and Halogen-free package
Symbol
MTE015N10QH8
GGate
DDrain
SSource
Outline
Pin 1
S
S
S
G
DFN5×6
D
D
D
D
G
S
S
S
D
D
D
D
Pin 1
Ordering Information
Device
MTE015N10QH8-0-T6-G
Package
DFN5×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTE015N10QH8
CYStek Product Specification




Cystech Electonics

MTE015N10QH8 Datasheet Preview

MTE015N10QH8 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=10V
Continuous Drain Current @ TC=100°C, VGS=10V
Continuous Drain Current @ TA=25°C, VGS=10V
Continuous Drain Current @ TA=70°C, VGS=10V
Pulsed Drain Current
Avalanche Current @ L=0.1mH
Avalanche Energy @ L=5mH, ID=13A, VDD=25V
Repetitive Avalanche Energy @ L=0.05mH
TC=25
Total Power Dissipation
TC=100
TA=25
TA=70
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDSM
IDM
IAS
EAS
EAR
PD
PDSM
Tj, Tstg
Spec. No. : C168H8
Issued Date : 2016.06.02
Revised Date :
Page No. : 2/10
Limits
100
±20
39
24.7
8.8 *3
7.0 *3
160 *1
39
422 *4
5 *2
50
20
2.5
1.6
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Rth,j-c
Rth,j-a
2.5
50 *3
°C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle1%
3. Surface mounted on 1 in² copper pad of FR-4 board, 125°C/W when mounted on minimum copper pad
4. 100% tested by conditions of L=0.1mH, IAS=20A, VGS=10V, VDD=25V
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
ΔBVDSS/ΔTj
VGS(th)
GFS *1
IGSS
IDSS
RDS(ON) *1
100 -
- V VGS=0V, ID=250μA
- 0.07
- V/°C Reference to 25°C, ID=250μA
2-
4 V VDS = VGS, ID=250μA
- 17.3
-
S VDS =10V, ID=20A
- - ±100 nA VGS=±20V
-
-
-
-
1
10
μA
VDS =80V, VGS =0V
VDS =80V, VGS =0V, Tj=85°C
- 12.6 16.5 mΩ VGS =10V, ID=20A
Dynamic
Ciss
Coss
Crss
- 1067
-
- 238 - pF VGS=0V, VDS=25V, f=1MHz
- 213
-
MTE015N10QH8
CYStek Product Specification


Part Number MTE015N10QH8
Description N-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
Total Page 10 Pages
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