MTE015N10QH8 - N-Channel Enhancement Mode Power MOSFET
Cystech Electonics
Key Features
Single Drive Requirement.
Low On-resistance.
Fast Switching Characteristic.
Pb-free lead plating and Halogen-free package
Symbol
MTE015N10QH8
G：Gate D：Drain S：Source
Outline
Pin 1
S S S G
DFN5×6
D D D D
G S
S
S
D D D D
Pin 1
Ordering Information
Device MTE015N10QH8-0-T6-G
Package
DFN5×6 (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and.
Full PDF Text Transcription for MTE015N10QH8 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
MTE015N10QH8. For precise diagrams, and layout, please refer to the original PDF.
CYStech Electronics Corp. Spec. No. : C168H8 Issued Date : 2016.06.02 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTE015N10QH8 BVDSS ID@VGS=10V...
View more extracted text
N-Channel Enhancement Mode Power MOSFET MTE015N10QH8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDSON(typ)@VGS=10V, ID=20A 100 V 39 A 8.8A 12.
MTE015N10QH8 Datasheet
