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MTE015N15RE3 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • RDS(ON)@VGS=10V, ID=30A.
  • Low Gate Charge.
  • Simple Drive Requirement.
  • Repetitive Avalanche Rated.
  • Fast Switching Characteristic.
  • Pb-free lead plating and RoHS compliant package 150V 90A 16mΩ (typ) Symbol MTE015N15RE3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device Package Shipping MTE015N15RE3-0-UB-X TO-220 (Pb-free lead plating package) 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S.

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Datasheet Details

Part number MTE015N15RE3
Manufacturer Cystech Electonics
File Size 317.72 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTE015N15RE3 Datasheet

Full PDF Text Transcription for MTE015N15RE3 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MTE015N15RE3. For precise diagrams, and layout, please refer to the original PDF.

CYStech Electronics Corp. Spec. No. : C838E3 Issued Date : 2016.06.13 Revised Date : 2016.06.23 Page No....

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