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MTE040N20P3 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • Pb-free lead plating package Equivalent Circuit MTE040N20P3 Outline TO-247 G:Gate D:Drain S:Source Ordering Information Device MTE040N20P3-0-UE-S GDS Package TO-247 (Pb-free lead plating package) Shipping 30 pcs / tube, 10 tubes/ box , 10 boxes/carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UE : 30 pcs / tube, 10 tubes/box, 10 boxes/carton Product.

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Datasheet Details

Part number MTE040N20P3
Manufacturer Cystech Electonics
File Size 459.76 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTE040N20P3 Datasheet

Full PDF Text Transcription for MTE040N20P3 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MTE040N20P3. For precise diagrams, and layout, please refer to the original PDF.

CYStech Electronics Corp. Spec. No. : C872P3 Issued Date : 2014.08.13 Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTE040N20P3 BVDSS ID RDS(ON)@V...

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N-Channel Enhancement Mode Power MOSFET MTE040N20P3 BVDSS ID RDS(ON)@VGS=10V, ID=28A RDS(ON)@VGS=6V, ID=10A 200V 50A 30.2mΩ(typ) 29.