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Cystech Electonics

MTE040N20P3 Datasheet Preview

MTE040N20P3 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C872P3
Issued Date : 2014.08.13
Revised Date :
Page No. : 1/8
N-Channel Enhancement Mode Power MOSFET
MTE040N20P3
BVDSS
ID
RDS(ON)@VGS=10V, ID=28A
RDS(ON)@VGS=6V, ID=10A
200V
50A
30.2mΩ(typ)
29.3mΩ(typ)
Features
Low Gate Charge
Simple Drive Requirement
Pb-free lead plating package
Equivalent Circuit
MTE040N20P3
Outline
TO-247
GGate DDrain
SSource
Ordering Information
Device
MTE040N20P3-0-UE-S
GDS
Package
TO-247
(Pb-free lead plating package)
Shipping
30 pcs / tube, 10 tubes/ box ,
10 boxes/carton
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, UE : 30 pcs / tube, 10 tubes/box, 10 boxes/carton
Product rank, zero for no rank products
Product name
MTE040N20P3
CYStek Product Specification




Cystech Electonics

MTE040N20P3 Datasheet Preview

MTE040N20P3 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25C
Continuous Drain Current @ TC=100C
Pulsed Drain Current *1
Avalanche Current
Avalanche Energy @ L=2mH, IAS=14A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH *2
Total Power Dissipation @TC=25
Total Power Dissipation @TC=100
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle 1%
Symbol
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
Pd
Tj, Tstg
Spec. No. : C872P3
Issued Date : 2014.08.13
Revised Date :
Page No. : 2/8
Limits
200
±20
50
35
200
14
196
30
300
150
-55~+175
Unit
V
A
mJ
W
C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
0.5
40
Unit
C/W
C/W
Characteristics (Tc=25C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
RDS(ON) *1
GFS *1
Dynamic
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr *1, 2
td(OFF) *1, 2
tf *1, 2
200
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
- - V VGS=0V, ID=250μA
- 4.0 V VDS =VGS, ID=250μA
-
±100
nA VGS=±20V, VDS=0V
- 1 μA VDS =200V, VGS =0V
- 25
VDS =160V, VGS =0V, TJ=125C
30.2
29.3
40
46
mΩ
VGS =10V, ID=28A
VGS =6V, ID=10A
44 - S VDS =15V, ID=28A
98.5 -
14.3 - nC ID=28A, VDS=160V, VGS=10V
38.4 -
32 -
29
70
-
-
ns
VDS=100V, ID=28A, VGS=10V,
RG=1.8Ω
17 -
MTE040N20P3
CYStek Product Specification


Part Number MTE040N20P3
Description N-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
Total Page 8 Pages
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