* Simple drive requirement
* Low on-resistance
* Fast switching speed
* Pb-free lead plating and halogen-free package BVDSS ID@VGS=-10V, TA=25°C ID@VGS=-10V, TA=70°C RDSON@VGS=-10V, ID=-5.3A -30V -6.6A -5.3A 36.3mΩ(typ) Equivalent Circuit MTE040P03Q8 Outline D D
MTE040P03Q8 Datasheet (588.23 KB)
MTE040P03Q8
Cystech Electonics
588.23 KB
P-channel enhancement mode power mosfet.
CYStech Electronics Corp. P-Channel Enhancement Mode MOSFET MTE040P03Q8 Spec. No. : C058Q8 Issued Date : 2016.11.03 Revised Date : Page No. : 1/9 Fe.
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