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Cystech Electonics

MTE050P10F3 Datasheet Preview

MTE050P10F3 Datasheet

P-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C975F3
Issued Date : 2015.12.10
Revised Date :
Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTE050P10F3
BVDSS
ID @ VGS=-10V, TC=25°C
ID @ VGS=-10V, TA=25°C
RDSON(TYP) @ VGS=-10V, ID=-20A
Features
Low Gate Charge
Simple Drive Requirement
Repetitive Avalanche Rated
Fast Switching Characteristic
RoHS compliant package
-100V
-44A
-4.6A
40mΩ
Symbol
MTE050P10F3
Outline
TO-263
GGate
DDrain
SSource
G DS
Ordering Information
Device
MTE050P10F3-0-T7-X
Package
Shipping
TO-263
(Pb-free lead plating and RoHS compliant package)
800 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T7 : 800 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTE050P10F3
CYStek Product Specification




Cystech Electonics

MTE050P10F3 Datasheet Preview

MTE050P10F3 Datasheet

P-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C975F3
Issued Date : 2015.12.10
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=-10V
Continuous Drain Current @ TC=100°C, VGS=-10V
Pulsed Drain Current
Continuous Drain Current @ TA=25°C , VGS=10V
Continuous Drain Current @ TA=70°C , VGS=10V
Avalanche Current
Avalanche Energy @ L=1mH, ID=-21A, VDD=-25V
Repetitive Avalanche Energy@ L=0.1mH
Power Dissipation
TC=25°C
TC=100°C
Power Dissipation
TA=25°C
TA=70°C
Operating Junction and Storage Temperature
Symbol
VDS
VGS
ID
(Note 3)
(Note 2)
(Note 2)
(Note 4)
(Note 4)
(Note 3)
(Note 1)
(Note 1)
(Note 2)
(Note 2)
IDM
IDSM
IAS
EAS
EAR
PD
PDSM
Tj, Tstg
Limits
-100
±20
-44
-31
-140
-4.6
-3.7
-44
221
20
200
100
2
1.3
-55~+175
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
(Note 2)
Symbol
Rth,j-c
Rth,j-a
Value
0.75
62
Unit
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design, and the
maximum temperature of 175°C may be used if the PCB allows it.
3. Pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and low duty cycles
to keep initial TJ=25°C.
4. 100% tested by conditions of L=1mH, IAS=-18A, VGS=-10V, VDD=-25V.
5. The static characteristics are obtained using <300μs pulses, duty cycle 0.5% maximum.
6. The RθJA is the sum of thermal resistance from junction to case RθJC and case to ambient.
MTE050P10F3
CYStek Product Specification


Part Number MTE050P10F3
Description P-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
Total Page 9 Pages
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