* Low Gate Charge
* Simple Drive Requirement
* Repetitive Avalanche Rated
* Fast Switching Characteristic
* RoHS compliant package -100V -44A -4.6A 40mΩ Symbol MTE050P10F3 Outline TO-263 G：Gate D：Drain S：Source G DS Ordering Information Device MTE050P1
MTE050P10F3 Datasheet (357.41 KB)
MTE050P10F3
Cystech Electonics
357.41 KB
P-channel enhancement mode power mosfet.
CYStech Electronics Corp. Spec. No. : C975F3 Issued Date : 2015.12.10 Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTE050P.
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