* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* ESD Protected Gate
* Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=10A 150V 14A 3.2A
MTE080N15KJ3 Datasheet (375.28 KB)
MTE080N15KJ3
Cystech Electonics
375.28 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE080N15KJ3 Spec. No. : C949J3 Issued Date : 2015.11.25 Revised Date : Page No. : .
📁 Related Datasheet
MTE080A10Q8 Dual N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTE010N10E3 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTE010N10F3 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTE010N10FP N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTE011N10RE3 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTE011N10RFP N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTE011N10RH8 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTE011N10RJ3 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTE013N08E3 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTE013N08H8 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
