MTE080N15KJ3 - N-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Datasheet Details

Part number	MTE080N15KJ3
Manufacturer	Cystech Electonics
File Size	375.28 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTE080N15KJ3-CystechElectonics.pdf

Low On Resistance.
Simple Drive Requirement.
Low Gate Charge.
Fast Switching Characteristic.
ESD Protected Gate.
Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=10A 150V 14A 3.2A 80 mΩ(typ) Symbol MTE080N15KJ3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTE080N15KJ3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package).

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Published: Aug 30, 2016 |