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MTE080N15KJ3 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • ESD Protected Gate.
  • Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=10A 150V 14A 3.2A 80 mΩ(typ) Symbol MTE080N15KJ3 Outline TO-252(DPAK) G:Gate D:Drain S:Source G DS Ordering Information Device MTE080N15KJ3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package).

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Datasheet Details

Part number MTE080N15KJ3
Manufacturer Cystech Electonics
File Size 375.28 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTE080N15KJ3 Datasheet

Full PDF Text Transcription for MTE080N15KJ3 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MTE080N15KJ3. For precise diagrams, and layout, please refer to the original PDF.

CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE080N15KJ3 Spec. No. : C949J3 Issued Date : 2015.11.25 Revised Date : Page No. : 1/ 9 Features • Low O...

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sued Date : 2015.11.25 Revised Date : Page No. : 1/ 9 Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • ESD Protected Gate • Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=10A 150V 14A 3.