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Cystech Electonics

MTE080N15KJ3 Datasheet Preview

MTE080N15KJ3 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTE080N15KJ3
Spec. No. : C949J3
Issued Date : 2015.11.25
Revised Date :
Page No. : 1/ 9
Features
Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
ESD Protected Gate
Pb-free lead plating and halogen-free package
BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=10A
150V
14A
3.2A
80 mΩ(typ)
Symbol
MTE080N15KJ3
Outline
TO-252(DPAK)
GGate DDrain SSource
G DS
Ordering Information
Device
MTE080N15KJ3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape& reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTE080N15KJ3
CYStek Product Specification




Cystech Electonics

MTE080N15KJ3 Datasheet Preview

MTE080N15KJ3 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C949J3
Issued Date : 2015.11.25
Revised Date :
Page No. : 2/ 9
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage (Note 1)
Gate-Source Voltage
Continuous Drain Current @TC=25°C, VGS=10V
Continuous Drain Current @TC=100°C, VGS=10V
Continuous Drain Current @TA=25°C, VGS=10V
Continuous Drain Current @TA=70°C, VGS=10V
Pulsed Drain Current @ VGS=10V
Avalanche Current
Single Pulse Avalanche Energy @ L=10mH, ID=5A, VDD=50V
TC=25°C
Power Dissipation
TC=100°C
TA=25°C
TA=70°C
Operating Junction and Storage Temperature
(Note 1)
(Note 1)
(Note 2)
(Note 2)
(Note 3)
(Note 4)
(Note 1)
(Note 1)
(Note 2)
(Note 2)
Symbol
VDS
VGS
ID
IDSM
IDM
IAS
EAS
PD
PDSM
Tj, Tstg
Limits
150
±20
14
8.9
3.2
2.6
56
9
125
50
20
2.5
1.6
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max (Note 2)
Symbol
RθJC
RθJA
Value
2.5
50
Unit
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2.The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C.
3. Pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and low duty cycles
to keep initial TJ=25°C.
4. 100% tested by conditions of L=100μH, IAS=5A, VGS=10V, VDD=50V
MTE080N15KJ3
CYStek Product Specification


Part Number MTE080N15KJ3
Description N-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
Total Page 9 Pages
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