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Cystech Electonics

MTEA0N10J3 Datasheet Preview

MTEA0N10J3 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C871J3
Issued Date : 2013.01.03
Revised Date :
Page No. : 1/10
N-Channel Enhancement Mode Power MOSFET
MTEA0N10J3 BVDSS
ID
Features
Low Gate Charge
Simple Drive Requirement
Pb-free lead plating package
RDSON(TYP)
VGS=10V, ID=12A
VGS=6V, ID=10A
100V
16A
83mΩ
100mΩ
Equivalent Circuit
MTEA0N10J3
Outline
TO-252AB
TO-252AA
GGate DDrain
SSource
GDS
G DS
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=10V, TC=25°C (Note 1)
Continuous Drain Current @ VGS=10V, TC=100°C (Note 1)
Continuous Drain Current @ VGS=10V, TA=25°C (Note 2)
Continuous Drain Current @ VGS=10V, TA=100°C (Note 2)
Pulsed Drain Current
(Note 3)
Avalanche Current
(Note 3)
Avalanche Energy @ L=0.5mH, ID=11A, RG=25Ω (Note 2)
Repetitive Avalanche Energy@ L=0.1mH
(Note 3)
Total Power Dissipation @TC=25
(Note 1)
Total Power Dissipation @TC=100(Note 1)
Total Power Dissipation @TA=25
(Note 2)
Total Power Dissipation @TA=70
(Note 2)
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IAS
EAS
EAR
PD
PDSM
Tj, Tstg
MTEA0N10J3
Limits
100
±20
16
11
3.7
2.3
64
11
30
6
60
30
2.5
1.6
-55~+175
Unit
V
A
mJ
W
°C
CYStek Product Specification




Cystech Electonics

MTEA0N10J3 Datasheet Preview

MTEA0N10J3 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C871J3
Issued Date : 2013.01.03
Revised Date :
Page No. : 2/10
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
2.5 °C/W
Thermal Resistance, Junction-to-ambient, max (Note 2)
RθJA
50 °C/W
Thermal Resistance, Junction-to-ambient, max (Note 4)
RθJA
110 °C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design, and the
maximum temperature of 175°C may be used if the PCB allows it.
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
4. When mounted on the minimum pad size recommended (PCB mount), t10s.
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
100 -
-V
2 3.2 4 V
-
-
±100
nA
-
-
-
-
1
25
μA
RDS(ON) *1
GFS *1
-
-
-
83
100
110
130
mΩ
11 - S
Dynamic
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr *1, 2
td(OFF) *1, 2
tf *1, 2
Ciss
Coss
Crss
- 5.5 -
- 1.3 - nC
- 2.1 -
-4-
-
-
15
15
-
-
ns
- 3.9 -
- 361 -
- 54 - pF
- 20 -
Source-Drain Diode
IS *1
ISM *3
VSD *1
trr
Qrr
-
-
-
-
-
-
-
12
30
A
0.89 1.3
V
35 - ns
22 - nC
Note : *1.Pulse Test : Pulse Width 300μs, Duty Cycle2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
VGS=0, ID=250μA
VDS =VGS, ID=250μA
VGS=±20, VDS=0
VDS =80V, VGS =0
VDS =80V, VGS =0, TJ=125°C
VGS =10V, ID=12A
VGS =6V, ID=10A
VDS =5V, ID=12A
ID=10A, VDS=50V, VGS=10V
VDS=50V, ID=1A, VGS=10V, RG=6Ω
VGS=0V, VDS=25V, f=1MHz
IF=IS, VGS=0V
IF=10A, dIF/dt=100A/μs
MTEA0N10J3
CYStek Product Specification


Part Number MTEA0N10J3
Description N-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
Total Page 10 Pages
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