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MTEA0N10J3 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • Pb-free lead plating package RDSON(TYP) VGS=10V, ID=12A VGS=6V, ID=10A 100V 16A 83mΩ 100mΩ Equivalent Circuit MTEA0N10J3 Outline TO-252AB TO-252AA G：Gate D：Drain S：Source GDS G DS Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=10V, TC=25°C (Note 1) Continuous Drain Current @ VGS=10V, TC=100°C (Note 1) Continuous Drain.

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Datasheet Details

Part number MTEA0N10J3
Manufacturer Cystech Electonics
File Size 264.25 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTEA0N10J3 Datasheet

Full PDF Text Transcription for MTEA0N10J3 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MTEA0N10J3. For precise diagrams, and layout, please refer to the original PDF.

CYStech Electronics Corp. Spec. No. : C871J3 Issued Date : 2013.01.03 Revised Date : Page No....

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