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Cystech Electonics

MTED6N25J3 Datasheet Preview

MTED6N25J3 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C894J3
Issued Date : 2013.03.11
Revised Date : 2013.12.30
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTED6N25J3 BVDSS
ID
RDSON(TYP)
VGS=10V, ID=5A
VGS=6V, ID=3A
250V
8A
435mΩ
410mΩ
Features
Low Gate Charge
Simple Drive Requirement
Pb-free lead plating and halogen-free package
Equivalent Circuit
MTED6N25J3
Outline
TO-252(DPAK)
GGate DDrain
SSource
G DS
Ordering Information
Device
Package
MTED6N25J3-0-T3-G
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTED6N25J3
CYStek Product Specification




Cystech Electonics

MTED6N25J3 Datasheet Preview

MTED6N25J3 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=10V, TC=25°C (Note 1)
Continuous Drain Current @ VGS=10V, TC=100°C (Note 1)
Continuous Drain Current @ VGS=10V, TA=25°C (Note 2)
Continuous Drain Current @ VGS=10V, TA=70°C (Note 2)
Pulsed Drain Current
(Note 3)
Avalanche Current
(Note 3)
Avalanche Energy @ L=50mH, ID=2A, VDD=50V (Note 2)
Repetitive Avalanche Energy@ L=0.1mH
(Note 3)
Total Power Dissipation @TC=25
(Note 1)
Total Power Dissipation @TC=100(Note 1)
Total Power Dissipation @TA=25
(Note 2)
Total Power Dissipation @TA=70
(Note 2)
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IAS
EAS
EAR
PD
PDSM
Tj, Tstg
Spec. No. : C894J3
Issued Date : 2013.03.11
Revised Date : 2013.12.30
Page No. : 2/9
Limits
250
±30
8
5
1.5
1.2
16
2
100
2
78
21
2.5
1.6
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
1.6 °C/W
Thermal Resistance, Junction-to-ambient, max (Note 2)
RθJA
50 °C/W
Thermal Resistance, Junction-to-ambient, max (Note 4)
RθJA
110 °C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C.
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
4. When mounted on the minimum pad size recommended (PCB mount), t10s.
MTED6N25J3
CYStek Product Specification


Part Number MTED6N25J3
Description N-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
Total Page 9 Pages
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