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MTEJ0P20KV8 - P-Channel Enhancement Mode MOSFET

Key Features

  • Simple drive requirement.
  • Low on-resistance.
  • Fast switching speed.
  • G-S ESD protected diode.
  • Pb-free lead plating and halogen-free package RDSON(Typ) -200V -3.9A @ VGS=-10V, TC=25°C -1.3A @ VGS=-10V, TA=25°C 0.79Ω @ VGS=-10V, ID=-1A 0.84Ω@ VGS=-6V, ID=-1A Equivalent Circuit MTEJ0P20KV8 Outline Pin 1 DFN3×3 G：Gate S：Source D：Drain Ordering Information Device MTEJ0P20KV8-0-T6-G Package DFN3×3 (Pb-free lead plating and halogen-free package) Ship.

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Datasheet Details

Part number MTEJ0P20KV8
Manufacturer Cystech Electonics
File Size 384.76 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet MTEJ0P20KV8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C124V8 Issued Date : 2015.11.06 Revised Date : Page No. : 1/10 P-Channel Enhancement Mode Power MOSFET MTEJ0P20KV8 BVDSS ID Features • Simple drive requirement • Low on-resistance • Fast switching speed • G-S ESD protected diode • Pb-free lead plating and halogen-free package RDSON(Typ) -200V -3.9A @ VGS=-10V, TC=25°C -1.3A @ VGS=-10V, TA=25°C 0.79Ω @ VGS=-10V, ID=-1A 0.