* Low VCE(sat), VCE(sat)=-0.7 V (typical), at IC / IB = -2A / -0.5A
* Excellent current gain characteristics
* Complementary to BTD1758J3 Symbol BTB1182J3 Outline TO-252 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltag
BTB1182J3 Datasheet (160.09 KB)
BTB1182J3
Cystech Electonics Corp
160.09 KB
Pnp transistor.
CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor www.DataSheet4U.com Spec. No. : C812J3 Issued Date : 2003.05.25 Revised Date : P.
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