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BTB1132M3 - PNP Transistor

Key Features

  • Low VCE(sat), VCE(sat)=-0.15V (typical), at IC / IB =- 0.5A /- 50mA.
  • Complementary to BTD1664M3 Symbol BTB1132M3 Outline SOT-89 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP Pd Tj Tstg Limits -40 -32 -5 -1 -2.5 0.6 2 150 -55~+150 Unit V.

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Datasheet Details

Part number BTB1132M3
Manufacturer Cystech Electonics Corp
File Size 172.80 KB
Description PNP Transistor
Datasheet download datasheet BTB1132M3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor Spec. No. : C313M3 www.DataSheet4U.com Issued Date : 2003.05.13 Revised Date : Page No. : 1/4 BTB1132M3 Features • Low VCE(sat), VCE(sat)=-0.15V (typical), at IC / IB =- 0.5A /- 50mA • Complementary to BTD1664M3 Symbol BTB1132M3 Outline SOT-89 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP Pd Tj Tstg Limits -40 -32 -5 -1 -2.5 0.6 2 150 -55~+150 Unit V V V A A W °C °C *1 *2 Note : *1 Single pulse, Pw=10ms *2 When mounted on a 40 × 40 × 0.7mm ceramic board.