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BTB1197N3 - PNP Transistor

General Description

The BTB1197N3 is designed with high current gain and low saturation voltage with collector current up to 1A continuous.

Key Features

  • Low VCE(SAT) , VCE(SAT)≤ -0.3V (IC / IB=-1A/-100mA).
  • Large collector current, IC=-1A.
  • Complementary to BTD1781N3.
  • Pb-free package Symbol BTB1197N3 Outline SOT-23 B：Base C：Collector E：Emitter BTB1197N3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Thermal Resistance.

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Datasheet Details

Part number BTB1197N3
Manufacturer Cystech Electonics Corp
File Size 286.98 KB
Description PNP Transistor
Datasheet download datasheet BTB1197N3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Low Saturation PNP Epitaxial Planar Transistor www.DataSheet4U.com Spec. No. : C314N3 Issued Date : 2005.04.20 Revised Date : Page No. : 1/ 5 BTB1197N3 Description The BTB1197N3 is designed with high current gain and low saturation voltage with collector current up to 1A continuous. Features • Low VCE(SAT) , VCE(SAT)≤ -0.3V (IC / IB=-1A/-100mA) • Large collector current, IC=-1A • Complementary to BTD1781N3. • Pb-free package Symbol BTB1197N3 Outline SOT-23 B：Base C：Collector E：Emitter BTB1197N3 CYStek Product Specification CYStech Electronics Corp.