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BTB1198N3 - PNP Transistor

Key Features

  • Low VCE(SAT), VCE(SAT)= -0.16V (Typ. ) @ IC/IB=-500mA/-50mA.
  • High breakdown voltage, BVCEO=-80V.
  • Complementary to BTD1782N3.
  • Pb-free package Symbol BTB1198N3 Outline SOT-23 B:Base C:Collector E:Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation (TA=25°C) Power Dissipation (TC=25°C) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction.

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Datasheet Details

Part number BTB1198N3
Manufacturer Cystech Electonics Corp
File Size 259.45 KB
Description PNP Transistor
Datasheet download datasheet BTB1198N3 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. PNP Epitaxial Planar Transistor www.DataSheet4U.com Spec. No. : C824N3 Issued Date : 2006.06.06 Revised Date : Page No. : 1/6 BTB1198N3 Features • Low VCE(SAT), VCE(SAT)= -0.16V (Typ.