Datasheet Details
| Part number | BTB1182J3 |
|---|---|
| Manufacturer | Cystech Electonics Corp |
| File Size | 160.09 KB |
| Description | PNP Transistor |
| Datasheet |
 BTB1182J3 Datasheet
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Key Features
- Low VCE(sat), VCE(sat)=-0.7 V (typical), at IC / IB = -2A / -0.5A.
- Excellent current gain characteristics.
- Complementary to BTD1758J3 Symbol BTB1182J3 Outline TO-252 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation (TC=25℃) Junction Temperature Storage Temperature Note : Single Pulse , Pw=10ms Sym.