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DMN2011UTS Datasheet N-channel MOSFET

Manufacturer: Diodes Incorporated

Overview: DMN2011UTS N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) Max 11mΩ @ VGS = 4.5V 13mΩ @ VGS = 2.

General Description

and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

 Battery Management Application  Power Management Functions  DC-DC Converters Mechanical Data  Case: TSSOP-8  Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish – Matte Tin Annealed over Copper Leadframe.

Key Features

  • Low Gate Threshold Voltage.
  • Low On-Resistance.
  • ESD Protected Gate.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.

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