DMN2991UV
DMN2991UV is N-CHANNEL ENHANCEMENT MODE MOSFET manufactured by Diodes Incorporated.
Description
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
Features and Benefits
- Low On-Resistance
- Low Gate Threshold Voltage VGS(TH) < 1V
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- Ultra-Small Surface-Mount Package
- ESD Protected Gate
- Totally Lead-Free & Fully Ro HS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- For automotive applications requiring specific change control
(i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://.diodes./quality/product-definitions/
Applications
- Battery-operated systems and solid-state relays
- Drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc.
- Power supply converter circuits
Mechanical Data
- Package: SOT563
- Package Material: Molded Plastic, “Green” Molding pound.
UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal Connections: See Diagram
- Terminals: Finish
- Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
- Weight: 0.006 grams (Approximate)
SOT563
ESD PROTECTED
Top View
Bottom View
Internal Schematic
Top View
Ordering Information (Note 4)
Notes:
Orderable Part Number
DMN2991UV-7 DMN2991UV-13
Package
SOT563...
