* Low On-Resistance
* Low Gate Threshold Voltage VGS(TH) < 1V
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* Ultra-Sm.
Features and Benefits
* Low On-Resistance
* Low Gate Threshold Voltage VGS(TH) < 1V
* Low Input Capacitanc.
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
Features and Benefits
* Low On-Resistance <.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 441.86KB)