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DMC1017UPD Datasheet

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

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DMC1017UPD
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
POWERDI®5060-8
Product Summary
Device V(BR)DSS
Q1 12V
Q2 -12V
RDS(ON)
17mΩ @ VGS = 4.5V
25mΩ @ VGS = 2.5V
32mΩ @ VGS = -4.5V
53mΩ @ VGS = -2.5V
ID
TA = +25°C
9.5A
7.8A
-6.9A
-5.4A
Description and Applications
This new generation Complementary Pair Enhancement Mode
MOSFET has been designed to minimize RDS(on) and yet maintain
superior switching performance. This device is ideal for use in
Notebook battery power management and Loadswitch.
Notebook Battery Power Management
DC-DC Converters
Loadswitch
Features and Benefits
Thermally Efficient Package-Cooler Running Applications
High Conversion Efficiency
Low RDS(ON) Minimizes On State Losses
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: POWERDI5060-8
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Weight: 0.097 grams (approximate)
D1 D2
S1
G1 G2
G1
S2
G2
S1 S2
Top View
Pin1
Bottom View
Q1 N-Channel MOSFET Q2 P-Channel MOSFET
Top View
Pin Configuration
D1
D1
D2
D2
Ordering Information (Note 4)
Notes:
Part Number
DMC1017UPD-13
Case
POWERDI5060-8
Packaging
2500 / Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
D1 D1 D2 D2
C1017UD
YY WW
= Manufacturer’s Marking
C1017UD = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
S1 G1 S2 G2
POWERDI is a registered trademark of Diodes Incorporated.
DMC1017UPD
Document number: DS36903 Rev. 1 - 2
1 of 9
www.diodes.com
September 2015
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DMC1017UPD Datasheet

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

No Preview Available !

Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = 4.5V
Steady
State
t<10s
Maximum Body Diode Forward Current
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current (Note 6) L = 0.1mH
Avalanche Energy (Note 6) L = 0.1mH
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
DMC1017UPD
Symbol
VDSS
VGSS
ID
ID
IS
IDM
IAS
EAS
Q1 Value
12
±8
9.5
7.6
13.0
10.4
2
50
9.7
4.7
Q2 Value
-12
±8
-6.9
-5.5
-9.4
-7.5
-2
-35
-9.2
4.3
Units
V
V
A
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
TA = +25°C
TA = +70°C
Steady state
t<10s
Symbol
PD
RθJA
RθJC
TJ, TSTG
Value
2.3
1.5
54
29
4.1
-55 to +150
Units
W
°C/W
°C
Electrical Characteristics Q1 N-Channel (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
VSD
Ciss
Coss
Crss
RG
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Min
12

0.6


Typ

9.6
11
0.7
1787
297
265
1.6
18.6
35.4
2.7
3.8
6.9
10.9
70.3
31.8
13.1
2.2
Max
1
100
1.5
17
25
1.2


Unit
Test Condition
V VGS = 0V, ID = 250µA
µA VDS = 12V, VGS = 0V
nA VGS = ±8V, VDS = 0V
V VDS = VGS, ID = 250µA
mΩ VGS = 4.5V, ID = 11.8A
VGS = 2.5V, ID = 9.8A
V VGS = 0V, IS = 2.9A
pF VDS = 6V, VGS = 0V,
f = 1.0MHz
Ω VDS = 0V, VGS = 0V, f = 1.0MHz
nCVDS = 6V, ID = 11.8A
nS
VDD = 6V, RL = 6Ω
VGS = 4.5V, RG = 6Ω, ID = 1A
nS IF = 11.8A, di/dt = 100A/μs
nC IF = 11.8A, di/dt = 100A/μs
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = 25°C.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
POWERDI is a registered trademark of Diodes Incorporated.
DMC1017UPD
Document number: DS36903 Rev. 1 - 2
2 of 9
www.diodes.com
September 2015
© Diodes Incorporated


Part Number DMC1017UPD
Description COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Maker Diodes
Total Page 9 Pages
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