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DMN1019USN Datasheet 12V N-CHANNEL MOSFET

Manufacturer: Diodes Incorporated

General Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Applications • Load Switch • DC-DC Converters • Power Management Functions SC59 DMN1019USN 12V N-CHANNEL ENHANCEMENT MODE MOSFET

Overview

NEW PRODUCT Product Summary V(BR)DSS 12V RDS(ON) MAX 10mΩ @ VGS = 4.5V 12mΩ @ VGS = 2.5V 14mΩ @ VGS = 1.8V 18mΩ @ VGS = 1.5V 41mΩ @ VGS = 1.2V ID TA = +25°C 9.3A 8.5A 7.9A 6.9A 4.

Key Features

  • Low On-Resistance.
  • ESD Protected Gate.
  • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3) .
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data.
  • Case: SC59.
  • Case Material.
  • Molded Plastic. UL Flammability Rating 94V-0.
  • Moisture Sensitivity: Level 1 per J-STD-020.
  • Terminals: Finish - Matte Tin Solderable per MIL-STD-202, Method 208 e3.