DMN2010UDZ Datasheet | Diodes Incorporated

A D VNAENACWDEPVDRAIONNDCFUEOCIRTNMFAOT IROMNA T I O N DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V(BR)DSS 24V RDS(ON) Max 7mΩ @ VGS = 4.5V 7.8mΩ @ VGS = 4.0V 8.2mΩ @ VGS = 3.7V 9.5mΩ @ VGS = 3.1V 10.5mΩ @ VGS = 2.5V ID TA = +25°C 11.0A 10.8A 10.6A 10.5A 10.0A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications - Power Management Functions - Battery Pack - Load Switch - Low On-Resistance - Low Gate Threshold Voltage - Low Input Capacitance - Fast Switching Speed - ESD Protected Gate > 2KV - Totally Lead-Free & Fully Ro HS pliant (Notes 1 & 2) - Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data - Case: U-DFN2535-6 - Case Material: Molded Plastic, “Green” Molding pound. UL Flammability Classification Rating...