DMN2014LHAB Datasheet | Diodes Incorporated

ADVANCE INFORMATION DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(on) max 13mΩ @ VGS = 4.5V 14mΩ @ VGS = 4.0V 17mΩ @ VGS = 3.1V 18mΩ @ VGS = 2.5V 28mΩ @ VGS = 1.8V ID TA = +25°C 9.0A 8.7A 8.0A 6.7A 6.3A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications - Power Management Functions - Battery Pack - Load Switch Features - Low On-Resistance - Low Gate Threshold Voltage - Low Input Capacitance - Fast Switching Speed - ESD Protected Gate - Totally Lead-Free & Fully...