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DMN2014LHAB - Dual N-Channel MOSFET

Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Power Management Functions Battery Pack Load Switc

Features

  • Low On-Resistance.
  • Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • ESD Protected Gate.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data.
  • Case: U-DFN2030-6.
  • Case Material: Molded Plastic, “Green” Molding Compound UL Flammability Classification Rating 94V-0.

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Datasheet preview – DMN2014LHAB

Datasheet Details

Part number DMN2014LHAB
Manufacturer Diodes Incorporated
File Size 250.45 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet DMN2014LHAB Datasheet
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Full PDF Text Transcription

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ADVANCE INFORMATION DMN2014LHAB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(on) max 13mΩ @ VGS = 4.5V 14mΩ @ VGS = 4.0V 17mΩ @ VGS = 3.1V 18mΩ @ VGS = 2.5V 28mΩ @ VGS = 1.8V ID TA = +25°C 9.0A 8.7A 8.0A 6.7A 6.3A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications • Power Management Functions • Battery Pack • Load Switch Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • ESD Protected Gate • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free.
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