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ZXTP722MA - 70V PNP LOW SATURATION TRANSISTOR

Key Features

  • BVCEO > -70V.
  • IC = -2.5A Continuous Collector Current.
  • Low Saturation Voltage (-220mV max @ -1A).
  • RSAT = 117 mΩ for a low equivalent On-Resistance.
  • hFE specified up to -3A for high current gain hold up.
  • Low profile 0.6mm high package for thin.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features and Benefits • BVCEO > -70V • IC = -2.5A Continuous Collector Current • Low Saturation Voltage (-220mV max @ -1A) • RSAT = 117 mΩ for a low equivalent On-Resistance • hFE specified up to -3A for high current gain hold up • Low profile 0.6mm high package for thin applications • RθJA efficient, 60% lower than SOT23 • 4mm2 footprint, 50% smaller than SOT23 • Lead-Free, RoHS Compliant (Note 1) • Halogen and Antimony Free. "Green" Device (Note 2) • Qualified to AEC-Q101 Standards for High Reliability DFN2020B-3 Top View Bottom View A Product Line of Diodes Incorporated ZXTP722MA 70V PNP LOW SATURATION TRANSISTOR Mechanical Data • Case: DFN2020B-3 • Case material: Molded Plastic. “Green” Molding Compound. • Terminals: Pre-Plated NiPdAu leadframe. • Nominal package height: 0.