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DFP830 - N-Channel MOSFET

General Description

This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply.

Also, especially designed to minimize rds(on) and high rugged avalanche characteristics.

Key Features

  • RDS(on) (Max 1.5 )@VGS=10V 1.Gate 2.Drain Gate Charge (Typical 32nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested BVDSS = 500V RDS(ON) = 1.5 ohm ID = 4.5A 3.Source General.

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Datasheet Details

Part number DFP830
Manufacturer DnI
File Size 724.53 KB
Description N-Channel MOSFET
Datasheet download datasheet DFP830 Datasheet

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www.DataSheet4U.com DFP830 N-Channel MOSFET Features RDS(on) (Max 1.5 )@VGS=10V 1.Gate 2.Drain Gate Charge (Typical 32nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested BVDSS = 500V RDS(ON) = 1.5 ohm ID = 4.5A 3.Source General Description This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220 pkg is well suited for half bridge and full bridge resonant topolgy like a electronic ballast .