RDS(on) (Max 1.5 )@VGS=10V 1.Gate 2.Drain Gate Charge (Typical 32nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested BVDSS = 500V RDS(ON) = 1.5 ohm ID =.

This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche cha.

DFP840

DFP85N06

DFP1000

DFP14

DFP16

DFP2INT

DFP2N60

DFP30N06

DFP4N60

DFP50N06

DFP630

DFP634

DFP640