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1SS388 - SILICON EPITAXIAL SCHOTTKY BARRER DIODE

Features

  • :.
  • Small package.
  • Low forward voltage.
  • Low revese current.
  • Pb / RoHS Free.

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Datasheet preview – 1SS388

Datasheet Details

Part number 1SS388
Manufacturer EIC
File Size 85.66 KB
Description SILICON EPITAXIAL SCHOTTKY BARRER DIODE
Datasheet download datasheet 1SS388 Datasheet
Additional preview pages of the 1SS388 datasheet.

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Full PDF Text Transcription

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1SS388 FEATURES : * Small package * Low forward voltage * Low revese current * Pb / RoHS Free MECHANICAL DATA : * Lesd Finish : 100% Matte Sn (Tin) * Mounting Position : Any * Qualified Max Reflow Temperature : 260 °C Absolute Maximum Ratings (Ta = 25 °C) Parameter Maximum Peak Reverse Voltage Maximum Reverse Voltage Maximum Average Forward Current Maximum Peak Forward Current Maximum Surge Current (10 ms) Power Dissipation Junction Temperature Storage Temperature Range Electrical Characteristics (Ta = 25 °C) Parameter Forward Voltage Reverse Current Total Capacitance Symbol VF IR CT Certificate : TH97/10561QM Certificate : TW00/17276EM SILICON EPITAXIAL SCHOTTKY BARRER DIODE SOD-523 1.25 1.15 0.8 0.70 5 0.60 0.7 0.4 0.135 0.3 0.127 1.65 1.
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