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1SS388 Datasheet Preview

1SS388 Datasheet

SILICON EPITAXIAL SCHOTTKY BARRER DIODE

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1SS388
FEATURES :
* Small package
* Low forward voltage
* Low revese current
* Pb / RoHS Free
MECHANICAL DATA :
* Lesd Finish : 100% Matte Sn (Tin)
* Mounting Position : Any
* Qualified Max Reflow Temperature : 260 °C
Absolute Maximum Ratings (Ta = 25 °C)
Parameter
Maximum Peak Reverse Voltage
Maximum Reverse Voltage
Maximum Average Forward Current
Maximum Peak Forward Current
Maximum Surge Current (10 ms)
Power Dissipation
Junction Temperature
Storage Temperature Range
Electrical Characteristics (Ta = 25 °C)
Parameter
Forward Voltage
Reverse Current
Total Capacitance
Symbol
VF
IR
CT
Certificate : TH97/10561QM
Certificate : TW00/17276EM
SILICON EPITAXIAL
SCHOTTKY BARRER DIODE
SOD-523
1.25
1.15
1.65
1.55
Dimensions in millimeters
Symbol
VRM
VR
IF
IFM
IFSM
Ptot
TJ
TSTG
Value
45
40
100
300
1.0
150
125
-55 to + 125
Unit
V
V
mA
mA
A
mW
°C
°C
Test Condition
IF = 50 mA
VR = 10 V
f = 1MHz
Max.
0.6
5
25
Unit
V
μA
pF
Page 1 of 2
Rev. 00 : May 7, 2007




EIC

1SS388 Datasheet Preview

1SS388 Datasheet

SILICON EPITAXIAL SCHOTTKY BARRER DIODE

No Preview Available !

Certificate : TH97/10561QM
Certificate : TW00/17276EM
RATING AND CHARACTERISTIC CURVES ( 1SS388 )
FIG.1 - POWER DISSIPATION VS.
AMBIENT TEMPERATURE
150
120
90
60
30
0
0 25 50 75 100
AMBIENT TEMPERATURE, ( °C)
125
FIG.2 - TOTAL CAPACITANCE VS.
REVERSE VOLTAGE
100
10
1
0 4 8 12 16 20 24 28 32 36
REVERSE VOLTAGE, (V)
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
1000
100
10
1 Ta = 25 °C
0.1
0
0.2 0.4 0.6
0.8 1.0 1.2
FORWARD VOLTAGE, (V)
1.4
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
100
10
Ta = 100 °C
1
Ta = 25 °C
0.1
0.01
0
10 20 30 40
REVERSE VOLTAGE, (V)
50
Page 2 of 2
Rev. 00 : May 7, 2007


Part Number 1SS388
Description SILICON EPITAXIAL SCHOTTKY BARRER DIODE
Maker EIC
Total Page 2 Pages
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