1SS388 Datasheet | Specifications & PDF Download

1SS388 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE for high speed switching application PINNING PIN 1 2 1 DESCRIPTION Cathode Anode 2 O Top View Marki

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Production specification Schottky Barrier Diode FEATURES  Low forward voltage.  Low reverse current.  Small package. APPLICATIONS  High-speed swi

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1SS388 High Speed Switching Diode SOD-523 Features — Low forward voltage. — Low reverse current. — Small package. Applications — High-speed switching

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes 1SS388 SCHOTTKY BARRIER DIODE FEATURES z Small pacakage z Low f

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1SS388 FEATURES : * Small package * Low forward voltage * Low revese current * Pb / RoHS Free MECHANICAL DATA : * Lesd Finish : 100% Matte Sn (Tin) *

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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS388 High Speed Switching Application 1SS388 Unit: mm  Small package  Low forward voltage:

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1SS388 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE FEATURES • Low forward voltage : VF(3)=0.54V(typ.) • Low reverse current : IR=5µA(typ.) • In compliance

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SURFACE MOUNT SCHOTTKY BARRIER DIODE FEATURES • Extremely Fast Switching Speed • Low Forward Voltage • Very Small Conduction Losses MECHANICAL DATA •

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® WON-TOP ELECTRONICS 1SS388 SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Low Turn-On Voltage  Fast Switching Speed  PN Junction Guard Ring

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SMD Type Diodes HIGH SPEED SWITCHING APPLICATION 1SS388 Features Small Package Low Forward Voltage :VF(3) = 0.54V(TYP.) Low Reverse Current :IR = 5

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MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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RoHS 1SS388 1SS388 High Speed SWITCHING Diodes FEATURES DSmall pacakage Low forward voltage : VF3 = 0.54 ( typ ) .,LTLow reverse current : IR = 5uA (

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