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eGaN® FET DATASHEET
EPC2215 – Enhancement Mode Power Transistor
VDS , 200 V RDS(on) , 8 mΩ ID , 32 A
D G
S
EPC2215
EFFICIENT POWER CONVERSION
HAL
Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows
very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.
EPC2215 Datasheet
