900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






EPC

EPC2215 Datasheet Preview

EPC2215 Datasheet

Power Transistor

No Preview Available !

eGaN® FET DATASHEET
EPC2215 – Enhancement Mode Power Transistor
VDS , 200 V
RDS(on) , 8 mΩ
ID , 32 A
D
G
S
EPC2215
EFFICIENT POWER CONVERSION
HAL
Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows
very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally
low QG and zero QRR. The end result is a device that can handle tasks where very high switching
frequency, and low on-time are beneficial as well as those where on-state losses dominate.
Maximum Ratings
PARAMETER
VDS Drain-to-Source Voltage (Continuous)
Continuous (TA = 25°C)
ID
Pulsed (25°C, TPULSE = 300 µs)
Gate-to-Source Voltage
VGS
Gate-to-Source Voltage
TJ Operating Temperature
TSTG Storage Temperature
VALUE
UNIT
200
V
32
A
162
6
V
-4
-40 to 150
°C
-40 to 150
Thermal Characteristics
PARAMETER
TYP
UNIT
RθJC Thermal Resistance, Junction-to-Case
0.5
RθJB Thermal Resistance, Junction-to-Board
2.5
°C/W
RθJA Thermal Resistance, Junction-to-Ambient (Note 1)
52
Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board.
See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.
EPC2215 eGaN® FETs are supplied only in
passivated die form with solder bars.
Die Size: 4.6 mm x 1.6 mm
Applications
• DC-DC Converters
• BLDC Motor Drives
• Sync Rectification for
AC/DC and DC-DC
• Multi-level AC/DC
Power Supplies
• Wireless Power
• Solar Micro Inverters
• Robotics
• Class-D Audio
Benefits
• Ultra High Efficiency
• No Reverse Recovery
• Ultra Low QG
• Small Footprint
PARAMETER
Static Characteristics (TJ = 25°C unless otherwise stated)
TEST CONDITIONS
MIN
BVDSS Drain-to-Source Voltage
IDSS Drain-Source Leakage
VGS = 0 V, ID = 0.6 mA
200
VGS = 0 V, VDS = 160 V
Gate-to-Source Forward Leakage
IGSS Gate-to-Source Forward Leakage#
Gate-to-Source Reverse Leakage
VGS = 5 V
VGS = 5 V, TJ = 125°C
VGS = -4 V
VGS(TH) Gate Threshold Voltage
VDS = VGS, ID = 6 mA
0.8
RDS(on) Drain-Source On Resistance
VGS = 5 V, ID = 20 A
VSD Source-Drain Forward Voltage
IS = 0.5 A, VGS = 0 V
# Defined by design. Not subject to production test.
TYP
MAX
UNIT
V
0.15
0.48
0.03
3.8
mA
0.5
8.7
0.15
0.48
1.1
2.5
V
6
8
mΩ
1.6
V
EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2020 |
|1




EPC

EPC2215 Datasheet Preview

EPC2215 Datasheet

Power Transistor

No Preview Available !

eGaN® FET DATASHEET
EPC2215
Dynamic Characteristics (TJ = 25°C unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
CISS
Input Capacitance#
CRSS
Reverse Transfer Capacitance
VDS = 100 V, VGS = 0 V
COSS
Output Capacitance#
COSS(ER)
COSS(TR)
Effective Output Capacitance, Energy Related (Note 2)
Effective Output Capacitance, Time Related (Note 3)
VDS = 0 to 100 V, VGS = 0 V
RG
Gate Resistance
QG
Total Gate Charge#
VDS = 100 V, VGS = 5 V, ID = 20 A
QGS
Gate-to-Source Charge
QGD
Gate-to-Drain Charge
VDS = 100 V, ID = 20 A
QG(TH)
Gate Charge at Threshold
QOSS
Output Charge#
VDS = 100 V, VGS = 0 V
QRR
Source-Drain Recovery Charge
# Defined by design. Not subject to production test.
Note 2: COSS(ER) is a fixed capacitance that gives the same stored energy as COSS while VDS is rising from 0 to 50% BVDSS.
Note 3: COSS(TR) is a fixed capacitance that gives the same charging time as COSS while VDS is rising from 0 to 50% BVDSS.
TYP
1356
2.0
390
556
699
0.4
13.6
3.3
2.1
2.4
69
0
MAX
1790
585
17.7
104
UNIT
pF
Ω
nC
Figure 1: Typical Output Characteristics at 25°C
160
140
VGS = 5 V
VGS = 4 V
120
VGS = 3 V
VGS = 2 V
100
80
60
40
20
0
0
1
2
3
4
5
6
VDS – Drain-to-Source Voltage (V)
Figure 3: RDS(on) vs. VGS for Various Drain Currents
Figure 2: Transfer Characteristics
160
140
25˚C
125˚C
120
VDDSS==36VV
100
80
60
40
20
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VGS – Gate-to-Source Voltage (V)
Figure 4: RDS(on) vs. VGS for Various Temperatures
20
ID = 10 A
ID = 20 A
ID = 30 A
15
ID = 40 A
10
5
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VGS – Gate-to-Source Voltage (V)
EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2020 |
20
25˚C
125˚C
VIDD=S =230 VA
15
10
5
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VGS – Gate-to-Source Voltage (V)
|2



Part Number EPC2215
Description Power Transistor
Maker EPC
Total Page 3 Pages
PDF Download

EPC2215 Datasheet PDF





Similar Datasheet

1 EPC2214 Power Transistor
EPC
2 EPC2215 Power Transistor
EPC





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy