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F59L2G81KA - 2-Gbit 3.3V NAND Flash Memory

Description

The device has two 2176-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2176-byte increments.

The Erase operation is implemented in a single block unit (128Kbytes + 8Kbytes).

Features

  • Voltage Supply ­ VCC: 3.3V (2.7 V ~ 3.6V).
  • Organization ­ Page Size: (2K + 128) bytes ­ Data Register: (2K + 128) bytes ­ Block Size: 64Pages = (128K + 8K) bytes ­ Number of Block per Die (LUN)= 2048.
  • Automatic Program and Erase ­ Page Program: (2K + 128) bytes ­ Block Erase: (128K + 8K) bytes.
  • Page Read Operation ­ Random Read: 25us (Max. ) ­ Read Cycle: 25ns.
  • Write Cycle Time ­ Page Program Time: 400us (Typ. ) 700us (Max. ) ­ Block Erase Time: 3 ms (Typ. ) 10ms (Max. ) F5.

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Datasheet Details

Part number F59L2G81KA
Manufacturer ESMT
File Size 1.34 MB
Description 2-Gbit 3.3V NAND Flash Memory
Datasheet download datasheet F59L2G81KA Datasheet
Additional preview pages of the F59L2G81KA datasheet.

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Full PDF Text Transcription

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ESMT Flash FEATURES  Voltage Supply ­ VCC: 3.3V (2.7 V ~ 3.6V)  Organization ­ Page Size: (2K + 128) bytes ­ Data Register: (2K + 128) bytes ­ Block Size: 64Pages = (128K + 8K) bytes ­ Number of Block per Die (LUN)= 2048  Automatic Program and Erase ­ Page Program: (2K + 128) bytes ­ Block Erase: (128K + 8K) bytes  Page Read Operation ­ Random Read: 25us (Max.) ­ Read Cycle: 25ns  Write Cycle Time ­ Page Program Time: 400us (Typ.) 700us (Max.) ­ Block Erase Time: 3 ms (Typ.) 10ms (Max.) F59L2G81KA (2N) Operation Temperature Condition -40°C~105°C 2 Gbit (256M x 8) 3.
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