Full PDF Text Transcription for G20N120 (Reference)
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G20N120. For precise diagrams, and layout, please refer to the original PDF.
Semiconductor HGTG20N120E2 April 1995 34A, 1200V N-Channel IGBT Features • 34A, 1200V • Latch Free Operation • Typical Fall Time - 780ns • High Input Impedance • Low Cond...
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peration • Typical Fall Time - 780ns • High Input Impedance • Low Conduction Loss Description The HGTG20N120E2 is a MOS gated, high voltage switch- ing device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, r
G20N120 Datasheet
