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* 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs -. CAS Latency ( 2 & 3) -. Bu.

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* ORDERING INFORMATION Part NO. KM416S1120DT-G/FC KM416S1120DT-G/F6 KM416S1120DT-G/F7 KM4.

The KM416S1120D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system cl.

KM416S1120AT

KM416S1020BT-G10T

KM416S1020C

KM416S1021C

KM416S4020A

KM416S4020B

KM416S4021AT

KM416S4021B

KM416S4030C

KM416S8030

KM416S8030B

KM416S8030BN

KM4164B