KM416S1021C - 512K x 16-Bit x 2-Bank SDRAM

Product Overview

Samsung Semiconductor

Datasheet Details

Part number	KM416S1021C
Manufacturer	Samsung Semiconductor
File Size	103.43 KB
Description	512K x 16-Bit x 2-Bank SDRAM
Datasheet	KM416S1021C Datasheet
Additional preview pages of the KM416S1021C datasheet.

Product details

Description

The KM416S1021C is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Features

JEDEC standard 3.3V power supply.
SSTL_3 (Class II) compatible with multiplexed address.
Dual banks operation.
MRS cycle with address key programs - CAS latency (2 & 3) - Burst length (1, 2, 4, 8 & Full page) - Burst type (Sequential & Interleave).
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
DQM for masking.
Auto & self refresh.
64ms refresh period.

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Published: Dec 5, 2005 |