KM416S8030BN - 128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL

Product Overview

Samsung semiconductor

Datasheet Details

Part number	KM416S8030BN
Manufacturer	Samsung semiconductor
File Size	83.41 KB
Description	128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Datasheet	KM416S8030BN Datasheet
Additional preview pages of the KM416S8030BN datasheet.

Product details

Description

The KM416S8030B is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Features

JEDEC standard 3.3V power supply.
LVTTL compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs - CAS latency (2 & 3) - Burst length (1, 2, 4, 8 & Full page) - Burst type (Sequential & Interleave).
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
DQM for masking.
Auto & self refresh.
64ms refresh period (4K cycle).

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Other Datasheets by Samsung semiconductor

KM416S8030B - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
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Published: Jul 3, 2007 |