Samsung semiconductor KM416S8030B
The KM416S8030B is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.| Part No. | KM416S8030B |
|---|---|
| Datasheet | KM416S8030B Download |
| Manufacturer |  Samsung semiconductor |
| Description | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| Buy | Stock & Price |
FEATURES
● JEDEC standard 3.3V power supply● LVTTL compatible with multiplexed address
● Four banks operation
● MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
● All inputs are sampled at the positive going edge of the system clock.
● Burst read single-bit write operation
● DQM for masking
● Auto & self refresh
● 64ms refresh period (4K cycle) Part No. KM416S8030BT-G/FA KM416S8030BT-G/F8 KM416S8030BT-G/FH KM416S8030BT-G/FL CMOS SDRAM
GENERAL DESCRIPTION
Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. ORDERING INFORMATION Max Freq. 133MHz(CL=3) 125MHz(CL=3) 100MHz(CL=2) 100MHz(CL=3) LVTTL 54 TSOP(II) Interface Package KM4...
