Datasheet4U Logo Datasheet4U.com

KM416S4030C - 1M x 16Bit x 4 Banks Synchronous DRAM

Datasheet Summary

Description

The KM416S4030C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG ′s high performance CMOS technology.

Features

  • JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst read single-bit write operation DQM for masking Auto & self refresh 64ms refresh period (4K cycle) Preliminary CMOS SDRAM.

📥 Download Datasheet

Datasheet preview – KM416S4030C

Datasheet Details

Part number KM416S4030C
Manufacturer Samsung semiconductor
File Size 124.27 KB
Description 1M x 16Bit x 4 Banks Synchronous DRAM
Datasheet download datasheet KM416S4030C Datasheet
Additional preview pages of the KM416S4030C datasheet.

📁 Similar Datasheet

  • KM416S4020A - CMOS SDRAM (Samsung Electronics)
  • KM416S4020B - CMOS SDRAM (Samsung Electronics)
  • KM416S4021AT - CMOS SDRAM (Samsung Electronics)
  • KM416S4021B - CMOS SDRAM (Samsung Electronics)
  • KM416S1020BT-G10T - CMOS 16M-Bit SDRAM (ETC)
  • KM416S1120AT - 521K x 16-Bit x 2 Bank SDRAM (Samsung Electronics)
  • KM416S1120D - 512K x 16bit x 2 Banks Synchronous DRAM LVTTL (ETC)
  • KM416C1200AT-6T - C-MOS 1M 16-BIT DYNAMIC RAM (ETC)
  • KM4100 - Low Cost/ +2.7V and +5V/ 260MHz Rail-to-Rail Amplifiers (Fairchild Semiconductor)
  • KM4101 - Low Cost/ +2.7V and +5V/ 260MHz Rail-to-Rail Amplifiers (Fairchild Semiconductor)
Other Datasheets by Samsung semiconductor
  • KM416S1020C - 1M x 16 SDRAM
  • KM416S1021C - 512K x 16-Bit x 2-Bank SDRAM
  • KM416S8030 - 2M x 16Bit x 4 Banks Synchronous DRAM
  • KM416S8030B - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  • KM416S8030BN - 128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  • KM4164B - 64K X 1 BIT DYNAMIC RAM WITH PAGE MODE
  • KM416C1000B - 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
  • KM416C1000C - 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode

Full PDF Text Transcription

Click to expand full text
KM416S4030C Revision History Revision 1 (May 1998) - ICC2 N value (10mA) is changed to 12mA. Preliminary CMOS SDRAM Revision .2 (June 1998) - tSH (-10 binning) is revised. REV. 2 June '98 KM416S4030C 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES • • • • JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -.
Published: |