KM416S8030 Overview
The KM416S8030 is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clcok cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to...
KM416S8030 Key Features
- JEDEC standard 3.3V power supply
- LVTTL patible with multiplexed address
- Four banks operation
- MRS cycle with address key programs -. CAS Latency (2 & 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Seque
- All inputs are sampled at the positive going edge of the system clock
- Burst Read Single-bit Write operation
- DQM for masking
- Auto & self refresh
- 64ms refresh period (4K cycle)
KM416S8030 Applications
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