Samsung semiconductor KM416S8030
The KM416S8030 is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.| Part No. | KM416S8030 |
|---|---|
| Datasheet | KM416S8030 Download |
| Manufacturer |  Samsung semiconductor |
| Description | 2M x 16Bit x 4 Banks Synchronous DRAM |
| Buy | Stock & Price |
FEATURES
● JEDEC standard 3.3V power supply● LVTTL compatible with multiplexed address
● Four banks operation
● MRS cycle with address key programs -. CAS Latency (2 & 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave)
● All inputs are sampled at the positive going edge of the system clock.
● Burst Read Single-bit Write operation
● DQM for masking
● Auto & self refresh
● 64ms refresh period (4K cycle) Preliminary CMOS SDRAM
GENERAL DESCRIPTION
Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clcok cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. ORDERING INFORMATION Part NO. KM416S8030T-G/F8 KM416S8030T-G/FH KM416S8030T-G/FL KM416S8030T-G/F10 MAX Freq. 125MHz 100MHz 100MHz 100MHz LVTTL 54pin TSOP(II) Interface Package FUNCTIONAL BLOC...
