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EDD5108ADTA-LI - 512M bits DDR SDRAM WTR

Description

The EDD5108AD and the EDD5116AD are 512M bits Double Data Rate (DDR) SDRAM.

Read and write operations are performed at the cross points of the CK and the /CK.

This high-speed data transfer is realized by the 2 bits prefetch-pipelined architecture.

Features

  • Power supply: VDD, VDDQ = 2.5V ± 0.2V.
  • Data Rate: 333Mbps/266Mbps (max. ).
  • Double Data Rate architecture; two data transfers per clock cycle.
  • Bi-directional, data strobe (DQS) is transmitted /received with data, to be used in capturing data at the receiver.
  • Data inputs, outputs, and DM are synchronized with DQS.
  • 4 internal banks for concurrent operation.
  • DQS is edge aligned with data for READs; center aligned with data for WRITEs.

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Datasheet preview – EDD5108ADTA-LI

Datasheet Details

Part number EDD5108ADTA-LI
Manufacturer Elpida Memory
File Size 629.72 KB
Description 512M bits DDR SDRAM WTR
Datasheet download datasheet EDD5108ADTA-LI Datasheet
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DATA SHEET 512M bits DDR SDRAM WTR (Wide Temperature Range) EDD5108ADTA-LI (64M words × 8 bits) EDD5116ADTA-LI (32M words × 16 bits) Description The EDD5108AD and the EDD5116AD are 512M bits Double Data Rate (DDR) SDRAM. Read and write operations are performed at the cross points of the CK and the /CK. This high-speed data transfer is realized by the 2 bits prefetch-pipelined architecture. Data strobe (DQS) both for read and write are available for high speed and reliable data bus design. By setting extended mode register, the on-chip Delay Locked Loop (DLL) can be set enable or disable. Pin Configurations /xxx indicates active low signal.
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