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EDJ1116DBSE - 64M words x 16 bits 1G bits DDR3 SDRAM

Download the EDJ1116DBSE datasheet PDF. This datasheet also covers the EDJ1108DBSE variant, as both devices belong to the same 64m words x 16 bits 1g bits ddr3 sdram family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Double-data-rate architecture; two data transfers per clock cycle.
  • The high-speed data transfer is realized by the 8 bits prefetch pipelined architecture.
  • Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the receiver.
  • DQS is edge-aligned with data for READs; centeraligned with data for WRITEs.
  • Differential clock inputs (CK and /CK).
  • DLL aligns DQ and DQS transitions with CK transi.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (EDJ1108DBSE-ElpidaMemory.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number EDJ1116DBSE
Manufacturer Elpida Memory
File Size 2.19 MB
Description 64M words x 16 bits 1G bits DDR3 SDRAM
Datasheet download datasheet EDJ1116DBSE Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET 1G bits DDR3 SDRAM EDJ1108DBSE (128M words × 8 bits) EDJ1116DBSE (64M words × 16 bits) Specifications • Density: 1G bits • Organization  16M words × 8 bits × 8 banks (EDJ1108DBSE)  8M words × 16 bits × 8 banks (EDJ1116DBSE) • Package  78-ball FBGA (EDJ1108DBSE)  96-ball FBGA (EDJ1116DBSE)  Lead-free (RoHS compliant) and Halogen-free • Power supply: VDD, VDDQ = 1.5V ± 0.075V • Data rate  1600Mbps/1333Mbps (max.