EDJ1108DBSE
EDJ1108DBSE is 128M words x 8 bits 1G bits DDR3 SDRAM manufactured by Elpida Memory.
Features
- Double-data-rate architecture; two data transfers per clock cycle
- The high-speed data transfer is realized by the 8 bits prefetch pipelined architecture
- Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the receiver
- DQS is edge-aligned with data for READs; centeraligned with data for WRITEs
- Differential clock inputs (CK and /CK)
- DLL aligns DQ and DQS transitions with CK transitions
- mands entered on each positive CK edge; data and data mask referenced to both edges of DQS
- Data mask (DM) for write data
- Posted /CAS by programmable additive latency for better mand and data bus efficiency
- On-Die Termination (ODT) for better signal quality Synchronous ODT Dynamic ODT Asynchronous ODT
- Multi Purpose Register (MPR) for temperature read out
- ZQ calibration for DQ drive and ODT
- Programmable Partial Array Self-Refresh (PASR)
- /RESET pin for Power-up sequence and reset function
- SRT range: Normal/extended
- Programmable Output driver impedance control
- Seamless BL4 access with bank-grouping
Document No. E1463E40 (Ver. 4.0) Date Published December 2009 (K) Japan Printed in Japan URL: http://.elpida.
Elpida Memory, Inc. 2009
EDJ1108DBSE, EDJ1116DBSE
Ordering Information
Part number
EDJ1108DBSE-GN-F EDJ1108DBSE-DJ-F
EDJ1116DBSE-GN-F EDJ1116DBSE-DJ-F
Die revision
Organization (words × bits) 128M × 8
64M × 16
Internal banks
JEDEC speed bin (CL-t RCD-t RP)
DDR3-1600K (11-11-11) DDR3-1333H (9-9-9)
DDR3-1600K (11-11-11) DDR3-1333H (9-9-9)
Package 78-ball FBGA 96-ball FBGA
Part Number
Elpida Memory
Type D: Monolithic Device
Product Family J: DDR3
Density / Bank 11: 1Gb /...
