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Ericsson

PTB20080 Datasheet Preview

PTB20080 Datasheet

25 Watts/ 1.6-1.7 GHz RF Power Transistor

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e
PTB 20080
25 Watts, 1.6–1.7 GHz
RF Power Transistor
Description
ThPTB 20080 is a class A/AB, NPN, silicon bipolar junction, internally-
matched RF power transistor intended for 26 Vdc operation from 1.6
to 1.7 GHz. It is rated at 25 Watts minimum output power for PEP
applications. Ion implantation, nitride surface passivation and gold
metallization ensure excellent device reliability. 100% lot traceability
is standard.
Typical Output Power & Efficiency vs. Input Power
40 80
• 25 Watts, 1.6–1.7 GHz
• Class AB Characteristics
• 40% Collector Efficiency at 25 Watts
• Gold Metallization
• Silicon Nitride Passivated
30 60
20 40
VCC = 26 V
10 ICQ = 125 mA 20
f = 1.65 GHz
00
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Input Power (Watts)
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25° C
Above 25° C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
20EX0XX 80
Package 20209
Symbol
VCER
VCBO
VEBO
IC
PD
TSTG
RθJC
Value
50
50
4.0
3.4
123
0.7
150
1.43
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
9/28/98
1




Ericsson

PTB20080 Datasheet Preview

PTB20080 Datasheet

25 Watts/ 1.6-1.7 GHz RF Power Transistor

No Preview Available !

PTB 20080
Electrical Characteristics (100% Tested)
Characteristic
Breakdown Voltage C to B
Breakdown Voltage E to B
Cut-off Current C to E
DC Current Gain
Conditions
VBE = 0 V, IC = 15 mA
IC = 5 mA
VCE = 26 V
VCE = 5 V, IC = 2 A
Symbol
V(BR)CES
V(BR)EBO
ICES
hFE
Min
50
4.0
30
RF Specifications (100% Tested)
Characteristic
Power Gain
(VCC = 26 Vdc, POUT = 10 W, ICQ = 125 mA, f = 1.65 GHz)
Power Output at 1 dB Compression
(VCC = 26 Vdc, ICQ = 125 mA, f = 1.65 GHz)
Collector Efficiency
(VCC = 26 Vdc, POUT = 25 W, ICQ = 125 mA, f = 1.65 GHz)
Load Mismatch Tolerance
(VCC = 26 Vdc, POUT = 25 W, ICQ = 125 mA,
f = 1.65 GHz—all phase angles at frequency of test)
Symbol Min
Gpe 10.5
P-1dB
25
ηC 40
Ψ
Impedance Data (data shown for fixed-tuned broadband circuit)
VCC = 26 Vdc, POUT = 25 W, ICQ = 125 mA
e
Typ Max Units
— — Vdc
— — Vdc
— 10 mA
——
Typ Max Units
11.5 —
dB
— — Watts
44 —
%
— 10:1
Z Source
Z Load
Frequency
GHz
1.60
1.65
1.70
Z Source
R jX
5.6 -4.1
5.6 -4.0
5.6 -4.0
Z Load
R jX
2.6 -1.0
2.6 -0.6
2.7 -0.2
Z0 = 50
5/6/98
2


Part Number PTB20080
Description 25 Watts/ 1.6-1.7 GHz RF Power Transistor
Maker Ericsson
Total Page 3 Pages
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