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PTB20080 Datasheet - Ericsson

25 Watts/ 1.6-1.7 GHz RF Power Transistor

PTB20080 General Description

ThPTB 20080 is a class A/AB, NPN, silicon bipolar junction, internallymatched RF power transistor intended for 26 Vdc operation from 1.6 to 1.7 GHz. It is rated at 25 Watts minimum output power for PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellen.

PTB20080 Datasheet (445.22 KB)

Preview of PTB20080 PDF

Datasheet Details

Part number:

PTB20080

Manufacturer:

Ericsson

File Size:

445.22 KB

Description:

25 watts/ 1.6-1.7 ghz rf power transistor.

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PTB20080 Watts 1.6-1.7 GHz Power Transistor Ericsson

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