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Ericsson

PTB20171 Datasheet Preview

PTB20171 Datasheet

25 Watts/ 935-960 MHz Cellular Radio RF Power Transistor

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PTB 20171
25 Watts, 935–960 MHz
Cellular Radio RF Power Transistor
Description
The 20171 is a class AB, NPN, common emitter RF power transistor
intended for 24 Vdc operation from 935 to 960 MHz. Rated at 25
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
• 25 Watts, 935–960 MHz
• Class AB Characteristics
• Gold Metallization
• Silicon Nitride Passivated
Typical Output Power vs. Input Power
40
30
20
10
0
0
VCC = 24 V
ICQ = 150 mA
f = 960 MHz
1 23
Input Power (Watts)
4
5
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
20171LOT CODE
Package 20200
Symbol
VCER
VCBO
VEBO
IC
PD
TSTG
RθJC
Value
50
50
4.0
5.0
145
0.833
–40 to +150
1.2
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
9/28/98
1




Ericsson

PTB20171 Datasheet Preview

PTB20171 Datasheet

25 Watts/ 935-960 MHz Cellular Radio RF Power Transistor

No Preview Available !

PTB 20171
Electrical Characteristics (100% Tested)
Characteristic
Breakdown Voltage C to E
Breakdown Voltage C to E
Breakdown Voltage E to B
DC Current Gain
Conditions
IB = 0 A, IC = 10 mA, RBE = 22
VBE = 0 V, IC = 10 mA
IC = 0 A, IE = 5 mA
VCE = 5 V, IC = 1 A
Symbol
V(BR)CER
V(BR)CES
V(BR)EBO
hFE
Min
50
55
4
20
RF Specifications (100% Tested)
Characteristic
Gain
(VCC = 24 Vdc, Pout = 25 W, ICQ = 150 mA, f = 960 MHz)
Collector Efficiency
(VCC = 24 Vdc, Pout = 25 W, ICQ = 150 mA, f = 960 MHz)
Load Mismatch Tolerance
(VCC = 24 Vdc, Pout = 25 W, ICQ = 150 mA,
f = 960 MHz—all phase angles at frequency of test)
Symbol Min
Gpe
ηC
Ψ
Impedance Data (data shown for fixed-tuned broadband circuit)
(VCC = 24 Vdc, Pout = 25 W, ICQ = 150 mA)
Z Source
Z Load
e
Typ
50
60
5
40
Max
Units
Volts
Volts
Volts
Typ Max Units
10.0 —
55 —
dB
%
— 10:1
Frequency
MHz
935
947
960
Z Source
R jX
4.25 -10.09
4.11 -9.81
3.97 -9.66
Z Load
R jX
11.92
-8.34
11.66
-8.47
11.34
-8.83
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
2
Specifications subject to change without notice.
LF
© 1997 Ericsson Inc.
EUS/KR 1301-PTB 20171 Uen Rev. B 09-28-98


Part Number PTB20171
Description 25 Watts/ 935-960 MHz Cellular Radio RF Power Transistor
Maker Ericsson
Total Page 2 Pages
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