Click to expand full text
EIB1415-4P
UPDATED 06/14/06
14.40-15.35GHz 4W Internally Matched Power FET
FEATURES
• • • • • • • 14.40-15.35 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.0 dBm Output Power at 1dB Compression 7.0 dB Power Gain at 1dB Compression 23% Power Added Efficiency -46 dBc IM3 at PO = 25.0 dBm SCL Non-Hermetic Metal Flange Package
EIB1415-4P
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS RTH PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression f = 14.40-15.35GHz VDS = 8 V, IDSQ ≈ 1600mA Gain at 1dB Compression f = 14.40-15.35GHz VDS = 8 V, IDSQ ≈ 1600mA Gain Flatness f = 14.40-15.35GHz VDS = 8 V, IDSQ ≈ 1600mA Power Added Efficiency at 1dB Compression f = 14.40-15.35GHz VDS = 8 V, IDSQ ≈ 1600mA Drain Current at 1dB Compression f = 14.40-15.
EIB1415-4P Datasheet
