| Description | N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 4.0mΩ ID 32A N‐Channel MOSFET UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage VGS Continuous Drain Current TC = 25 °C ID TA = 25 °C Pulsed Drain Current1 T... |
| Features |
.5 1
‐55 to 150
UNIT V A
mJ W W °C
MAXIMUM 6 50
UNIT °C / W
p.1
EMB04N03V
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current
On‐State Drain Current1 Drain‐...
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| Datasheet |
 EMB04N03V Datasheet 868.57KB |
