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EMP75N03HR Excelliance MOS N-Channel Logic Level Enhancement Mode Field Effect Transistor

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Description N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) @VGS=10V RDSON (MAX.) @VGS=4.5V 7.5mΩ 10.5mΩ ID@TC=25°C 50A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL EMP75N03HR LIMITS UNIT Gate-Source Voltage V...
Features RJA 1Pulse width limited by maximum junction temperature. 2Duty cycle  1% 350°C / W when mounted on a 1 in2 pad of 2 oz copper. 2.5 °C / W 50 2019/08/06 p.1 ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS EMP75N03HR LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Thr...

Datasheet PDF File EMP75N03HR Datasheet - 867.77KB
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