Datasheet Details
| Part number | 30H10K |
|---|---|
| Manufacturer | FUMAN |
| File Size | 681.30 KB |
| Description | N-Channel Trench Power MOSFET |
| Datasheet |
 30H10K Datasheet
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General Description
The 30H10K uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 5V.
This device is suitable for use as a wide variety of applications.
Key Features
- VDS = 30V,ID =100A RDS(ON) < 4.2mΩ @ VGS =10V RDS(ON) < 7mΩ @ VGS =5V.
- High Power and current handing capability.
- Lead free product is acquired.
- Surface Mount Package.