30H10K mosfet equivalent, n-channel trench power mosfet.
* VDS = 30V,ID =100A RDS(ON) < 4.2mΩ @ VGS =10V RDS(ON) < 7mΩ @ VGS =5V
* High Power and current handing capability
* Lead free product is acquired
* Surf.
Features
* VDS = 30V,ID =100A RDS(ON) < 4.2mΩ @ VGS =10V RDS(ON) < 7mΩ @ VGS =5V
* High Power and current hand.
The 30H10K uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 5V. This device is suitable for use as a wide variety of applications.
Features
* VDS = 30V,ID =100A RDS(ON) < 4..
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