Datasheet Details
| Part number | FDN537N |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 211.47 KB |
| Description | N-Channel MOSFET |
| Datasheet | FDN537N-Fairchild.pdf |
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Overview: FDN537N Single N-Channel Power Trench® MOSFET FDN537N Single N-Channel Power Trench® MOSFET 30 V, 6.
| Part number | FDN537N |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 211.47 KB |
| Description | N-Channel MOSFET |
| Datasheet | FDN537N-Fairchild.pdf |
|
|
|
Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A Max rDS(on) = 36 mΩ at VGS = 4.5 V, ID = 6.0 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Fast switching speed 100% UIL Tested RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
Application Primary DC-DC Switch MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) TC = 25 °C -Continuous TA = 25 °C -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range Thermal Characteristics (Note 3) (Note 1a) (Note 1a) (Note 1b) Ratings 30 ±20 8.0 6.5 25 1.5 0.6 -55 to +150 Units V V A W °C RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1a) 80 (Note 1b) 180 °C/W Device Marking 537 Device FDN537N Package SSOT-3 Reel Size 7 ’’ Tape Width 8 mm Quantity 3000 units ©2013 Fairchild Semiconductor Corporation 1 FDN537N Rev.C2 www.fairchildsemi.com FDN537N Single N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250 μA, VGS = 0 V ID = 250 μA, referenced to 25 °C Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V 30 V 18 mV/°C 1 μA 100 nA On Characteristics
| Brand Logo | Part Number | Description | Manufacturer |
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FDN537N | N-Channel MOSFET | ON Semiconductor |
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