Datasheet Summary
FDN537N Single N-Channel Power Trench® MOSFET
Single N-Channel Power Trench® MOSFET
30 V, 6.5 A, 23 mΩ
January 2013
Features
General Description
- Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A
- Max rDS(on) = 36 mΩ at VGS = 4.5 V, ID = 6.0 A
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability in a widely used surface mount package
- Fast switching speed
- 100% UIL Tested
- RoHS pliant
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
Application
- Primary DC-DC Switch
MOSFET Maximum Ratings TA =...
