FDN537N mosfet equivalent, n-channel mosfet.
General Description
* Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A
* Max rDS(on) = 36 mΩ at VGS = 4.5 V, ID = 6.0 A
* High performance trench technology fo.
* Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A
* Max rDS(on) = 36 mΩ at VGS = 4.5 V, ID = 6.0 A
* High performance trench technology for extremely low rDS(on)
* High power and current handling capability in a widely used
surface mou.
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