FDN537N N-Channel MOSFET

ON Semiconductor

Description

DATA SHEET www.onsemi.com MOSFET * Single, N-Channel, POWERTRENCH) 30 V, 6.5 A, 23 mW VDS 30 V RDS(ON) MAX 23 mW @ 10 V 36 mW @ 4.5 V ID M.
This N. Channel MOSFET is produced using onsemi advanced POWERTRENCH® process that has been optimized for rDS(on), switching performance and ru.

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Datasheet Specifications

Part number: FDN537N
Manufacturer: ON Semiconductor ↗
File Size: 352.44 KB
Datasheet: FDN537N-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* Max rDS(on) = 23 mW @ VGS = 10 V, ID = 6.5 A
* Max rDS(on) = 36 mW @ VGS = 4.5 V, ID = 6.0 A
* High Performance Trench Technology for Extremely Low rDS(on)
* High Power and Current Handling Capability in a Widely Used Surface Mount Package
* Fast Switching S

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FDN537N N-Channel MOSFET ON Semiconductor

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