FDN537N - N-Channel MOSFET

ON Semiconductor

FDN537N Datasheet Preview — Preview of FDN537N PDF

Datasheet Details

Part number	FDN537N
Manufacturer	ON Semiconductor ↗
File Size	352.44 KB
Description	N-Channel MOSFET
Datasheet	FDN537N-ONSemiconductor.pdf

FDN537N Product details

Description

This N Channel MOSFET is produced using onsemi advanced POWERTRENCH® process that has been optimized for rDS(on), switching performance and ruggedness.

Features

Max rDS(on) = 23 mW @ VGS = 10 V, ID = 6.5 A.
Max rDS(on) = 36 mW @ VGS = 4.5 V, ID = 6.0 A.
High Performance Trench Technology for Extremely Low rDS(on).
High Power and Current Handling Capability in a Widely Used Surface Mount Package.
Fast Switching Speed.
100% UIL Tested.
This Device is Pb.
Free and is RoHS Compliant.

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Published: Dec 25, 2023 |