FDN028N20 - N-Channel MOSFET

ON Semiconductor

FDN028N20 Datasheet Preview — Preview of FDN028N20 PDF

Datasheet Details

Part number	FDN028N20
Manufacturer	ON Semiconductor ↗
File Size	337.79 KB
Description	N-Channel MOSFET
Datasheet	FDN028N20-ONSemiconductor.pdf

FDN028N20 Product details

Description

This N Channel POWERTRENCH MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on state resistance and yet maintain low gate charge for superior switching performance.

Features

Max rDS(on) = 28 mW at VGS = 4.5 V, ID = 5.2 A.
Max rDS(on) = 45 mW at VGS = 2.5 V, ID = 4.4 A.
High Performance Trench Technology for Extremely Low rDS(on).
High Power and Current Handling Capability in a Widely Used Surface Mount Package.
Fast Switching Speed.
100% UIL Tested.
This Device is Pb.
Free, Halide Free and is RoHS Compliant.

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Published: Apr 24, 2024 |