FDN028N20

N-Channel MOSFET

ON Semiconductor

* Max rDS(on) = 28 mW at VGS = 4.5 V, ID = 5.2 A

* Max rDS(on) = 45 mW at VGS = 2.5 V, ID = 4.4 A

* High Performance Trench Technology for Extremely Low rDS(on)

* High Power and Current Handling Capability in a Widely Used Surface Mount Package

* Fast Switchin

FDN028N20

337.79 KB

N-channel mosfet.

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FDN028N20 N-Channel MOSFET ON Semiconductor

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