FDN028N20 Datasheet, Mosfet, ON Semiconductor

FDN028N20 Features

• Mosfet
• Max rDS(on) = 28 mW at VGS = 4.5 V, ID = 5.2 A
• Max rDS(on) = 45 mW at VGS = 2.5 V, ID = 4.4 A
• High Performance Trench Technology for Extremely Low rDS(on)

PDF File Details

Part number:

FDN028N20

Manufacturer:

ON Semiconductor ↗

File Size:

337.79kb

Download:

📄 Datasheet

Description:

N-channel mosfet. This N

Channel POWERTRENCH MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored t

FDN028N20 Application

• Applications
• Primary DC
• DC Switch
• Load Switch MOSFET MAXIMUM RATINGS (TC = 25°C, unless otherwise noted) Symbol Param

TAGS

FDN028N20

ON Semiconductor

📁 Related Datasheet

FDN302P - P-Channel MOSFET (Fairchild Semiconductor)
FDN302P October 2000 FDN302P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET uses a rugged gat.

FDN302P - P-Channel MOSFET (ON Semiconductor)
MOSFET – P-Channel, 2.5 V Specified, POWERTRENCH) FDN302P General Description This P−Channel 2.5 V specified MOSFET uses a rugged gate version of ons.

FDN304P - P-Channel MOSFET (Fairchild Semiconductor)
FDN304P January 2001 FDN304P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s.

FDN304P - P-Channel MOSFET (Kexin)
SMD Type P-Channel MOSFET FDN304P (KDN304P) MOSFET ■ Features ● VDS (V) =-20V ● ID =-2.4A (VGS =-4.5V) ● RDS(ON) ＜ 52mΩ (VGS =-4.5V) ● RDS(ON) ＜ 70.

FDN304P - P-Channel MOSFET (ON Semiconductor)
MOSFET – P-Channel 1.8 V Specified POWERTRENCH) FDN304P General Description This P−Channel 1.8 V specified MOSFET uses onsemi’s advanced low voltage P.

FDN304PZ - P-Channel MOSFET (ON Semiconductor)
MOSFET – P-Channel, 1.8 V Specified, POWERTRENCH) FDN304PZ General Description This P−Channel 1.8 V specified MOSFET uses onsemi’s advanced low volta.

FDN304PZ - P-Channel MOSFET (Fairchild Semiconductor)
FDN304PZ March 2003 FDN304PZ P-Channel 1.8V Specified PowerTrench® MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s .

FDN306P - P-Channel MOSFET (Fairchild Semiconductor)
FDN306P December 2001 FDN306P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s.

FDN306P - P-Channel MOSFET (ON Semiconductor)
MOSFET – P-Channel, 1.8 V Specified, POWERTRENCH) FDN306P General Description This P−Channel 1.8 V specified MOSFET uses onsemi’s advanced low voltag.

FDN308P - P-Channel MOSFET (Fairchild Semiconductor)
FDN308P February 2001 FDN308P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET uses a rugged ga.