FDN028N20 N-Channel MOSFET

ON Semiconductor

Description

MOSFET * N-Channel, POWERTRENCH) 20 V, 6.1 A, 28 mW FDN028N20 General .
This N. Channel POWERTRENCH MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on.

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Datasheet Specifications

Part number: FDN028N20
Manufacturer: ON Semiconductor ↗
File Size: 337.79 KB
Datasheet: FDN028N20-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* Max rDS(on) = 28 mW at VGS = 4.5 V, ID = 5.2 A
* Max rDS(on) = 45 mW at VGS = 2.5 V, ID = 4.4 A
* High Performance Trench Technology for Extremely Low rDS(on)
* High Power and Current Handling Capability in a Widely Used Surface Mount Package
* Fast Switchin

Applications

* Primary DC
* DC Switch
* Load Switch MOSFET MAXIMUM RATINGS (TC = 25°C, unless otherwise noted) Symbol Parameter Ratings Unit VDS Drain to Source Voltage 20 V VGS Gate to Source Voltage (Note 3) ±12 V ID Continuous TA = 25°C (Note 1a) 6.1 A Pulsed (Note 5) 5

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FDN028N20 N-Channel MOSFET ON Semiconductor

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