FDN302P - P-Channel MOSFET

ON Semiconductor

FDN302P Datasheet Preview — Preview of FDN302P PDF

Datasheet Details

Part number	FDN302P
Manufacturer	ON Semiconductor ↗
File Size	300.83 KB
Description	P-Channel MOSFET
Datasheet	FDN302P-ONSemiconductor.pdf

FDN302P Product details

Description

This P Channel 2.5 V specified MOSFET uses a rugged gate version of onsemi’s advanced POWERTRENCH process.It has been optimized for power management applications with a wide range of gate drive voltage (2.5 V 12 V).

Features

20 V,.
2.4 A RDS(ON) = 0.055 W @ VGS =.
4.5 V RDS(ON) = 0.080 W @ VGS =.
2.5 V.
Fast Switching Speed.
High Performance Trench Technology for Extremely Low RDS(ON).
SUPERSOTt.
3 Provides Low RDS(ON) and 30% Higher Power Handling Capability than SOT.
23 in the Same Footprint.
This is a Pb.
Free and Halide Free Device.

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Published: Dec 25, 2023 |