FDN302P

P-Channel MOSFET

ON Semiconductor

* 20 V,

* 2.4 A RDS(ON) = 0.055 W @ VGS =

* 4.5 V RDS(ON) = 0.080 W @ VGS =

* 2.5 V

* Fast Switching Speed

* High Performance Trench Technology for Extremely Low RDS(ON)

* SUPERSOTt

* 3 Provides Low RDS(ON) and 30% Higher Power Hand

FDN302P

300.83 KB

P-channel mosfet.

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FDN302P P-Channel MOSFET ON Semiconductor

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