NDC7001C
Description
These dual N and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
Key Features
- RDS(ON)= 5Ω @ VGS=-10V
- High density cell design for low RDS(ON)
- Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities
- High saturation current
