NDC7001C - Dual N&P-Channel MOSFET

Fairchild (now onsemi)

Datasheet Details

Part number	NDC7001C
Manufacturer	Fairchild (now onsemi)
File Size	284.60 KB
Description	Dual N&P-Channel MOSFET
Datasheet	NDC7001C Datasheet

General Description

These dual N and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching.

These devices is particularly suited for low voltage, low current, switching, and power supply applications.

Overview

March 1996 NDC7001C Dual N & P-Channel Enhancement Mode Field Effect.

Key Features

N-Channel 0.51A, 50V, RDS(ON) = 2Ω @ VGS=10V P-Channel -0.34A, -50V. RDS(ON)= 5Ω @ VGS=-10V. High density cell design for low RDS(ON). Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities. High saturation current. ____________________________________________________________________________________________ 4 3 5 2 6 SuperSOTTM-6 1 Absolute Maximum Ratings Symbol VDSS VGSS ID Parameter Drain-Source Voltage T A = 25°C unless other.

📁 Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	NDC7001C	Dual N&P-Channel MOSFET	ON Semiconductor

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