NDC7001C mosfet equivalent, dual n&p-channel mosfet.
N-Channel 0.51A, 50V, RDS(ON) = 2Ω @ VGS=10V P-Channel -0.34A, -50V. RDS(ON)= 5Ω @ VGS=-10V. High density cell design for low RDS(ON). Proprietary SuperSOTTM-6 package de.
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N-Channel 0.51A, 50V, RDS(ON) = 2Ω @ VGS=10V P-Channel -0.34A, -50V. RDS(ON)= 5Ω @ VGS=-10V. High density cel.
These dual N and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugge.
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&P-Channel
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