dual p-channel mosfet.
-0.34A, -50V. RDS(ON)= 5Ω @ VGS=-10V. High density cell design for low RDS(ON). Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and e.
requiring a low current high side switch.
Features
-0.34A, -50V. RDS(ON)= 5Ω @ VGS=-10V. High density cell design for l.
These dual P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and .
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