NDC7001C - Dual N&P-Channel MOSFET

ON Semiconductor

NDC7001C Datasheet Preview — Preview of NDC7001C PDF

Datasheet Details

Part number	NDC7001C
Manufacturer	ON Semiconductor ↗
File Size	359.51 KB
Description	Dual N&P-Channel MOSFET
Datasheet	NDC7001C-ONSemiconductor.pdf

NDC7001C Product details

Description

These dual N & P Channel Enhancement Mode Field Effect Transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.This very high density process has been designed to minimize on state resistance, provide rugged and reliable performance and fast switching.

Features

Q1 0.51 A, 60 V RDS(ON) = 2 W @ VGS = 10 V RDS(ON) = 4 W @ VGS = 4.5 V.
Q2.
0.34 A, 60 V RDS(ON) = 5 W @ VGS =.
10 V RDS(ON) = 7.5 W @ VGS =.
4.5 V.
High Saturation Current.
High Density Cell Design for Low RDS(ON).
Proprietary SUPERSOTt.
6 Package Design Using Copper Lead Frame for Superior Thermal and Electrical Capabilities.
This is a Pb.
Free Device.

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Published: Aug 19, 2023 |