NDC7001C

Dual N&P-Channel MOSFET

ON Semiconductor

NDC7001C Features

* Q1 0.51 A, 60 V RDS(ON) = 2 W @ VGS = 10 V RDS(ON) = 4 W @ VGS = 4.5 V

* Q2

* 0.34 A, 60 V RDS(ON) = 5 W @ VGS =

* 10 V RDS(ON) = 7.5 W @ VGS =

* 4.5 V

* High Saturation Current

* High Density Cell Design for Low RDS(ON)

* Proprietary SU

NDC7001C General Description

These dual N & P

*Channel Enhancement Mode Field Effect Transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on

*state resistance, provide rugged and reliable performance and fast switching.

NDC7001C Datasheet (359.51 KB)